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| MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE CM600HN-5F IC...................................................................600A VCES .......................................................... 250V Insulated Type 1-element in a pack UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, Forklift OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (6) 24 (7.9) 20 29 (16) 17.5 7.5 4-6.5 MOUNTING HOLES E (9) (10) (10) (13) T E E G CIRCUIT DIAGRAM C 20 E G C 93 0.25 108 2-M6 NUTS 2-M4 NUTS +1 36 -0.5 +1 25.8 -0.5 LABEL (8.5) 48 0.25 62 T Mar. 2009 MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 250 20 600 1200 600 1200 1780 -40 ~ +150 -40 ~ +125 2500 1.96 ~ 2.94 1.96 ~ 2.94 0.98 ~ 1.47 400 Unit V V A A A A W C C Vrms N*m N*m N*m g (Note 2) (Note 2) -- -- Charged part to base plate, sinusoidal, AC 60Hz 1min. Main terminals M6 screw Mounting M6 screw G(E) auxiliary terminal M4 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol ICES Item Test Conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 600A, VGE = 10V Tj = 150C VCE = 10V VGE = 0V VCC = 100V, IC = 600A, VGE = 10V VCC = 100V, IC = 600A VGE1 = VGE2 = 10V RG = 4.2 Resistive load IE = 600A, VGE = 0V IE = 600A, die / dt = -1200A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 4 -- 1.2 1.1 -- -- -- 2200 -- -- -- -- -- -- 9.5 -- -- -- Max 1 5 0.5 1.7 -- 165 7.5 5.6 -- 1000 4000 1000 500 2.0 300 -- 0.07 0.11 0.04 Unit mA V A V nF nF nF nC ns ns ns ns V ns C K/W K/W K/W Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time VEC(Note 1) Emitter-collector voltage trr (Note 1) Reverse recovery time Qrr (Note 1) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance Note 1. 2. 3. 4. (Note 4) IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Mar. 2009 2 MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1200 Tj=25C 10 VGE=15 (V) 6 8 5.75 1200 VCE = 10V TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 1000 800 600 COLLECTOR CURRENT IC (A) 1000 800 600 400 200 0 5.5 5.25 400 5 200 0 4.75 4.5 0 1 2 3 4 5 Tj = 25C Tj = 125C 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2.5 VGE = 10V Tj = 25C Tj = 125C 2.0 5 Tj = 25C 4 IC = 1200A IC = 600A 2 1.5 3 1.0 0.5 1 IC = 240A 0 0 200 400 600 800 1000 1200 0 0 5 10 15 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 CAPACITANCE CHARACTERISTICS (TYPICAL) 103 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 Tj = 25C 5 7 VGE = 0V 5 3 2 EMITTER CURRENT IE (A) Cies 103 7 5 3 2 102 7 5 3 2 102 7 5 3 2 101 7 5 3 2 Coes 101 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Cres 100 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Mar. 2009 3 MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 104 7 5 REVERSE RECOVERY TIME trr (ns) SWITCHING TIME (ns) 3 2 VCC = 100V VGE = 10V RG = 4.2 Tj = 125C 5 3 2 5 3 trr lrr 2 103 7 5 3 2 td(off) td(on) tf 102 7 5 3 2 102 7 5 3 2 tr 2 3 5 7 102 2 3 5 7 103 102 1 10 101 1 10 2 3 5 7 102 2 3 5 7 103 101 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 101 7 Single Pulse 5 3 TC = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 Single Pulse 5 3 TC = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 Per unit base = Rth(j - c) = 0.07K/ W NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 Per unit base = Rth(j - c) = 0.11K/ W 10-1 10-1 10-2 10-2 10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 710-0 2 3 5 7 101 TIME (s) 10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 710-0 2 3 5 7 101 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 25 GATE-EMITTER VOLTAGE VGE (V) IC = 600A 20 VCC = 50V 15 VCC = 100V 10 5 0 0 1 2 3 4 5 6 GATE CHARGE QG (C) Mar. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 -di/dt = 1200A/s 7 7 Tj = 25C |
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